![Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs]()
Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTsYonezawa, Yoshiyuki; Mizushima, Tomonori; Takenaka, Kensuke; Fujisawa, Hiroyuki; Deguchi, T.; Kato, Tomohisa; Harada, Shinsuke; Tanaka, Yasunori; Okamoto, Dai; Sometani, Mitsuru; Okamoto, M.; Yoshikawa, M.; Tsutsumi, T.; Sakai, Y.; Kumagai, N.; Matsunaga, S.; Takei, M.; Arai, Masayuki; Hatakeyama, T.; Takao, K.; Shinohe, T.; Izumi, T.; Hayashi, T.; Nakayama, K.; Asano, K.; Miyajima, M.; Kimura, H.; Otsuki, A.; Fukuda, K.; Okumura, H.; Kimoto, T. · Materials Science Forum · 2015