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Modeling of the Temperature Profiles and Thermoelectric Effects in Phase Change Memory CellsMa, Changcheng; He, Jing; Lu, Jingjing; Zhu, Jie; Hu, Zuoqi · Applied Sciences · 2018
[IEEE 2011 International Semiconductor Device Research Symposium (ISDRS) - College Park, MD, USA (2011.12.7-2011.12.9)] 2011 International Semiconductor Device Research Symposium (ISDRS) - Modeling of thermoelectric effects in phase change memory cellsDirisaglik, Faruk; Bakan, Gokhan; Gokirmak, Ali; Silva, Helena · 2011
Electronic-Frequency-Tuning MagnetronObata, Hideyuki; Tsuji, Naoki; Furumoto, Kuniyoshi · IEEE Transactions on Electron Devices · 2012
Potential device applications using photorefractive materialsDube, R.R. · IEEE Transactions on Electron Devices · 1989
GigatronMcIntyre, P.M.; Bizek, H.M.; Elliott, S.M.; Nassiri, A.; Popovic, M.B.; Raparia, D.; Swenson, C.A.; Gray, H.F. · IEEE Transactions on Electron Devices · 1989
Complementary Magnetic Tunnel Junction LogicFriedman, Joseph S.; Sahakian, Alan V. · IEEE Transactions on Electron Devices · 2014
Periodically Allocated Reentrant Cavity KlystronPaoloni, Claudio · IEEE Transactions on Electron Devices · 2014
A theory of multiplication noiseHollenhorst, J.N. · IEEE Transactions on Electron Devices · 1990
Table of contentsIEEE Transactions on Electron Devices · 2014
2014 IEEE CSICS Short CoursesIEEE Transactions on Electron Devices · 2014