ESD and transient protection of microwave semiconductor devices and integrated circuits based on field emitter structures
- 作者K. Bock; H.L. Hartnagel
- 卷第25卷
- 期第1期
- 印刷ISSN0026-2692
- 文件大小452.24KB
- 发表时间1994
- DOI10.1016/0026-2692(94)90160-0
- 页码69-74
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Simple expression for the effective electron relaxation time in n-GaAsA.R. Batchelor · 1993
Synchrotron radiation studies of inorganic–organic semiconductor interfacesD.A. Evans; H.J. Steiner; A.R. Vearey-Roberts; A. Bushell; G. Cabailh; S. O’Brien; J.W. Wells; I.T. McGovern; V.R. Dhanak; T.U. Kampen; D.R.T. Zahn; D. Batchelor · 2003
On the relative advantages of modelling semiconductors using a non-isothermal analysisA.R. Batchelor; R.E. Miles; M.J. Howes · 1992
On the design of doping concentration profiles for GaAs transferred-electron device layersA.R. Batchelor · 1992
An accurate calculation of the d.c. electrical and thermal characteristics of GaAs transferred-electron devicesA.R. Batchelor; R.E. Miles; M.J. Howes · 1990
Angle dependence of the O K edge absorption spectra of TiO2 thin films with preferential textureS. Räth; F. Gracia; F. Yubero; J.P. Holgado; A.I. Martin; D. Batchelor; A.R. González-Elipe · 2003