An Advanced NAND-Structure Cell Technology for Reliable 3.3 V 64 Mb Electrically Erasable and Programmable Read Only Memories (EEPROMs)
Aritome, Seiichi; Hatakeyama, Ikuo; Endoh, Tetsuo; Yamaguchi, Tetsuya; Shuto, Susumu; Iizuka, Hirohisa; Maruyama, Tooru; Watanabe, Hiroshi; Hemink, Gertjan; Sakui, Koji; Tanaka, Tomoharu; Momodomi, Masaki; Shirota, Riichiro
- 期刊名称Japanese Journal of Applied Physics
- 作者Aritome, Seiichi; Hatakeyama, Ikuo; Endoh, Tetsuo; Yamaguchi, Tetsuya; Shuto, Susumu; Iizuka, Hirohisa; Maruyama, Tooru; Watanabe, Hiroshi; Hemink, Gertjan; Sakui, Koji; Tanaka, Tomoharu; Momodomi, Masaki; Shirota, Riichiro
- 卷第33卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小1907.96KB
- 发表时间1994-1-30
- DOI10.1143/JJAP.33.524
- 页码524-528