Impact-parameter dependence of resonant-coherent excitation of channeled ions
- 作者F.J. García de Abajo; P.M. Echenique
- 卷第115卷
- 印刷ISSN0168-583X
- 文件大小598.01KB
- 发表时间1996
- DOI10.1016/0168-583x(95)01515-9
- 页码299-305
同作者推荐
Band structure evolution in InAs overlayers on GaAs(110)Z.Q. He; L. Ilver; J. Kanski; P.O. Nilsson; P. Songsiriritthigul; G. Holmén; U.O. Karlsson · 1996
Strained SiGe-alloy layers formed by solid phase epitaxial growth of Ge+ ion implanted siliconP. Songsiriritthigul; G. Holmén; E. Olsson · 1997
Thermal solid phase epitaxial growth and ion-beam induced crystallisation of Ge+ ion implanted layers in siliconP. Songsiriritthigul; G. Holmén · 1996