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Ferroelectric Properties of
<b>
<i>B</i>
<i>a</i>
<i>M</i>
<i>g</i>
<i>F</i>
<sub/>4</sub></b>
Films Grown on Si(100), (111), and
<b>
<i>P</i>
<i>t</i>
(111)/
<i>S</i>
<i>i</i>
<i>O</i>
<sub/>2</sub>
/
<i>S</i>
<i>i</i>
(100)
</b>
Structures

Ferroelectric Properties of B a M g F ₄ Films Grown on Si(100), (111), and P t (111)/ S i O ₂ / S i (100) Structures

Aizawa, Koji; Ichiki, Tatsuya; Okamoto, Tomoyuki; Tokumitsu, Eisuke; Ishiwara, Hiroshi

期刊名称Japanese Journal of Applied Physics
作者Aizawa, Koji; Ichiki, Tatsuya; Okamoto, Tomoyuki; Tokumitsu, Eisuke; Ishiwara, Hiroshi
卷第35卷
印刷ISSN0021-4922
电子ISSN1347-4065
文件大小244.89KB
发表时间1996-2-28
DOI10.1143/JJAP.35.1525
页码1525-1530

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