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Fabrication of
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              Double Barrier Diodes using Two-Dimensional Si Structures

Fabrication of S i O 2 / S i / S i O 2 Double Barrier Diodes using Two-Dimensional Si Structures

Namatsu, Hideo; Horiguchi, Seiji; Takahashi, Yasuo; Nagase, Masao; Kurihara, Kenji
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Namatsu, Hideo; Horiguchi, Seiji; Takahashi, Yasuo; Nagase, Masao; Kurihara, Kenji
  • 卷第36卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小1670.41KB
  • 发表时间1997-6-15
  • DOI10.1143/JJAP.36.3669
  • 页码3669-3674
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