![Hopping transport in the space-charge region ofp-nstructures with InGaN/GaN QWs as a source of excess 1/fnoise and efficiency droop in LEDs]()
Hopping transport in the space-charge region ofp-nstructures with InGaN/GaN QWs as a source of excess 1/fnoise and efficiency droop in LEDsBochkareva, N. I.; Ivanov, A. M.; Klochkov, A. V.; Kogotkov, V. S.; Rebane, Yu. T.; Virko, M. V.; Shreter, Y. G. · Semiconductors · 2015