![High sensitivity measurement of implanted As in the presence of Ge in Ge[sub x]Si[sub 1−x]/Si layered alloys using trace element accelerator mass spectrometry]()
High sensitivity measurement of implanted As in the presence of Ge in Ge[sub x]Si[sub 1−x]/Si layered alloys using trace element accelerator mass spectrometryDatar, S. A.; Wu, Liying; Guo, B. N.; Nigam, M.; Necsoiu, D.; Zhai, Y. J.; Smith, D. E.; Yang, C.; Bouanani, M. E.; Lee, J. J.; McDaniel, F. D. · Applied Physics Letters · 2000