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- 期刊名称Technology, Law and Insurance
- 作者Andersson, L.D.
- 卷第4卷
- 印刷ISSN1359-9372
- 文件大小263.38KB
- 发表时间1999-09
- DOI10.1080/135993799348901
- 页码191-196
Photoluminescence studies of GaSbBi quantum dots grown on GaAs by liquid phase epitaxyDas, T.D.; Samajdar, D.P.; Bhowal, M.K.; Das, S.C.; Dhar, S. · Current Applied Physics · 2016
Influence of Bi and N related impurity states on the band structure and band offsets of GaSbBiN alloysSamajdar, D.P.; Das, Utsa; Sharma, A.S.; Das, Subhasis; Dhar, S. · Current Applied Physics · 2016
Thermoelectric transport in topological insulatorsTakahashi, Ryuji; Murakami, Shuichi · Semiconductor Science and Technology · 2012
Quantum dot laserLedentsov, N N · Semiconductor Science and Technology · 2011
Atomic layer depositionGodlewski, Marek · Semiconductor Science and Technology · 2012
Interband tunnelling in semiconductor heterostructuresZakharova, A · Semiconductor Science and Technology · 1998
Special issue on GrapheneMorpurgo, Alberto F; Trauzettel, Björn · Semiconductor Science and Technology · 2010
Optical processes in microcavitiesSlusher, R E · Semiconductor Science and Technology · 1994
Progress in topological insulatorsMorpurgo, Alberto; Trauzettel, Björn · Semiconductor Science and Technology · 2012
Quantum well intermixingMarsh, J H · Semiconductor Science and Technology · 1993