![ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping]()
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trappingCanato, E.; Meneghini, M.; Nardo, A.; Masin, F.; Barbato, A.; Barbato, M.; Stockman, A.; Banerjee, A.; Moens, P.; Zanoni, E.; Meneghesso, G. · Microelectronics Reliability · 2019