A theoretical study of dioxymethylene, proposed as intermediate in the oxidation of formaldehyde to formate over copper
- 作者J.R.B. Gomes; J.A.N.F. Gomes
- 卷第446卷
- 期第3期
- 印刷ISSN0039-6028
- 文件大小273.73KB
- 发表时间2000
- DOI10.1016/s0039-6028(99)01157-7
同作者推荐
Al3O3 thin film growth on Si(100) using binary reaction sequence chemistryA.W. Ott; J.W. Klaus; J.M. Johnson; S.M. George · 1997
Atomic layer controlled deposition of Al2O3 films using binary reaction sequence chemistryA.W. Ott; K.C. McCarley; J.W. Klaus; J.D. Way; S.M. George · 1996
Erratum to “Al2O3 thin film growth on Si (100) using binary reaction sequence chemistry” [Thin Solid Films 292 (1997) 135–144]A.W. Ott; J.W. Klaus; J.M. Johnson; S.M. George · 2009