Deposition and optical studies of silicon carbide nitride thin films
- 作者K.B. Sundaram; J. Alizadeh
- 卷第370卷
- 印刷ISSN0040-6090
- 文件大小156.90KB
- 发表时间2000
- DOI10.1016/s0040-6090(00)00956-1
- 页码151-154
Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wellsMadhavi, S.; Venkataraman, V.; Sturm, J. C.; Xie, Y. H. · Physical Review B · 2000
[IEEE 1996 54th Annual Device Research Conference Digest - Santa Barbara, CA, USA (24-26 June 1996)] 1996 54th Annual Device Research Conference Digest - High field drift velocity of 2DEG in Si/SiGe heterostructures as determined by magnetoresistance techniquesMadhavi, S.; Venkataraman, V.; Liu, C.W.; Sturm, J.C. · 1996
[IEEE 58th DRC. Device Research Conference - Denver, CO, USA (19-21 June 2000)] 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526) - High room temperature hole mobility in Ge/sub 0.7/Si/sub 0.3//Ge/Ge/sub 0.7/Si/sub 0.3/ modulation doped heterostructures in the absence of parallel conductionMadhavi, S.; Venkataraman, V.; Xie, Y.H. · 2000