Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique
- 期刊名称Japanese Journal of Applied Physics
- 作者Furusho, Tomoaki; Lilov, Stanislav Krastev; Ohshima, Satoru; Nishino, Shigehiro
- 卷第40卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小98.58KB
- 发表时间2001-12-15
- DOI10.1143/JJAP.40.6737
- 页码6737-6740
Spectral Emissivity of SiliconSatō, Tsutomu · Japanese Journal of Applied Physics · 1967
Surface Acoustic Wave SensorsShiokawa, Showko; Kondoh, Jun · Japanese Journal of Applied Physics · 2004
Perspectives in SonochemistryAndo, Takashi; Kimura, Takahide · Japanese Journal of Applied Physics · 2003
Structurally Stable Hyperbolic BeamChakraborty, Rijuparna; Ghosh, Ajay · Japanese Journal of Applied Physics · 2009
Peierls Phase TransitionKagoshima, Seiichi · Japanese Journal of Applied Physics · 1981
Piezoelectric Tensor of KNbO <sub/>3</sub>Günter, P. · Japanese Journal of Applied Physics · 1977
Plasma Anodic Oxidation of InPFuyuki, Takashi; Moriuchi, Sohta; Matsunami, Hiroyuki · Japanese Journal of Applied Physics · 1983
Linearity Characteristics of Multiplier PhototubesNonaka, Mamoru; Kashima, Takeo · Japanese Journal of Applied Physics · 1963