List of Reviewers 2002
- 期刊名称Sarsia
- 卷第87卷
- 期第6期
- 印刷ISSN0036-4827
- 文件大小32.81KB
- 发表时间2002-12
- DOI10.1080/0036482021000155775
- 页码480-480
[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - 2018 International Meeting for Future of Electron Devices, Kansai2018
[IEEE International Meeting for Future of Electron Devices, 2004. - Kyoto, Japan (2004.07.26-2004.07.28)] International Meeting for Future of Electron Devices, 2004. - International Meeting for Future of Electron Devices, Kansai (IEEE Cat. No. 04EX829)2004
[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - IMFEDK2012. 2012 International Meeting for Future of Electron Devices, Kansai [Front matter]2012
[IEEE International Meeting for Future of Electron Devices, Kansai - Kyoto, Japan (2004.07.26-2004.07.28)] International Meeting for Future of Electron Devices, 2004. - International Meeting for Future of Electron Devices, Kansai2004
[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Preface - Welcome to the 10th International Meeting for Future of Electron Devices, KansaiAkasaka, Yoichi; Omura, Yasuhisa · 2012
[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Awards2012
[IEEE 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2012.05.9-2012.05.11)] 2012 IEEE International Meeting for Future of Electron Devices, Kansai - Organization2012
[IEEE 2013 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Japan (2013.06.5-2013.06.6)] 2013 IEEE International Meeting for Future of Electron Devices, Kansai - Organization2013
Empirical nonlinear modeling for RF MOSFETsSeonghearn Lee · 2004
Accurate high-frequency equivalent circuit model of silicon MOSFETsLee, Seonghearn; Yu, Hyun Kyu · Electronics Letters · 1999
Improved high-frequency output equivalent circuit modelling for MOSFETsLee, Seonghearn; Hong, Seoyoung · Electronics Letters · 2015
Effects of pad and interconnection parasitics on forward transit time in HBTsSeonghearn Lee · 1999
Analysis of kink phenomenon in S 11-parameter of standard RF MOSFETsAhn, Jahyun; Lee, Seonghearn · Electronics Letters · 2015
Improved BSIM3v3 model for RF MOSFET IC simulationLee, Seonghearn; Kim, Cheon Soo; Yu, Hyun Kyu · Electronics Letters · 2000
Frequency-dependent empirical modeling for intrinsic output capacitance and conductance of HR PD-SOI MOSFETsLee, Changjo; Lee, Seonghearn · Microwave and Optical Technology Letters · 2019
Direct extraction technique for a small-signal MOSFET equivalent circuit with substrate parametersSeonghearn Lee · 2003