Elevated Extension Structure for 35 nm MOSFETs
- 期刊名称Japanese Journal of Applied Physics
- 作者Kamata, Yoshiki; Ono, Mizuki; Nishiyama, Akira
- 卷第41卷
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小306.46KB
- 发表时间2002-4-30
- DOI10.1143/JJAP.41.2339
- 页码2339-2344
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