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Indium segregation to dislocation loops induced by ion implantation damage in silicon

Indium segregation to dislocation loops induced by ion implantation damage in silicon

Noda, Taiji
  • 期刊名称Journal of Applied Physics
  • 作者Noda, Taiji
  • 卷第93卷
  • 期第3期
  • 印刷ISSN0021-8979
  • 文件大小690.41KB
  • 发表时间2003
  • DOI10.1063/1.1534629
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