Silicon nitride and polyimide capping layers on InGaAs/InP PIN photodetector after sulfur treatment
- 作者M.R Ravi; Amitava DasGupta; Nandita DasGupta
- 卷第268卷
- 印刷ISSN0022-0248
- 文件大小243.45KB
- 发表时间2004
- DOI10.1016/j.jcrysgro.2004.04.054
- 页码359-363
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