![[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - 5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm
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SRAM cells for Mobile SoC and High Performance Computing Applications]()
[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - 5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm
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SRAM cells for Mobile SoC and High Performance Computing ApplicationsYeap, Geoffrey; Chen, X.; Yang, B. R.; Lin, C. P.; Yang, F. C.; Leung, Y. K.; Lin, D. W.; Chen, C. P.; Yu, K. F.; Chen, D. H.; Chang, C. Y.; Lin, S. S.; Chen, H. K.; Hung, P.; Hou, C. S.; Cheng, Y. K.; Chang, J.; Yuan, L.; Lin, C. K.; Chen, C. C.; Yeo, Y. C.; Tsai, M. H.; Chen, Y. M.; Lin, H. T.; Chui, C. O.; Huang, K. B.; Chang, W.; Lin, H. J.; Chen, K. W.; Chen, R.; Sun, S. H.; Fu, Q.; Yang, H. T.; Shang, H. L.; Chiang, H. T.; Yeh, C. C.; Lee, T. L.; Wang, C. H.; Shue, S. L.; Wu, C. W.; Lu, R.; Lin, W. R.; Wu, J.; Lai, F.; Wang, P. W.; Wu, Y. H.; Tien, B. Z.; Huang, Y. C.; Lu, L. C.; He, Jun; Ku, Y.; Lin, J.; Cao, M.; Chang, T. S.; Jang, S. M.; Lin, H. C.; Peng, Y. C.; Sheu, J. Y.; Wang, M. · 2019