Electron Transport in Nanostructures and Mesoscopic Devices || Index
- 作者Ouisse, Thierry
- 文件大小210.33KB
- 发表时间2008
- DOI10.1002/9780470611395.index
- 页码383-387
Properties of Transmission Lines on Various SiC SubstratesRoyet, A.S.; Cabon, B.; Ouisse, Thierry; Billon, Thierry · Materials Science Forum · 2000
Neutral impurity scattering with electron screeningThierry Ouisse · 1999
Electronic structure ofPinek, Damir; Ito, Takahiro; Ikemoto, Masashi; Nakatake, Masashi; Ouisse, Thierry · Physical Review B · 2018
nanolamellar carbidesPinek, Damir; Ito, Takahiro; Ikemoto, Masashi; Yaji, Koichiro; Nakatake, Masashi; Shin, Shik; Ouisse, Thierry · Physical Review B · 2019
Electron Transport in Nanostructures and Mesoscopic Devices || IndexOuisse, Thierry · 2008
Electron Transport in Nanostructures and Mesoscopic Devices || AppendicesOuisse, Thierry · 2008
Electron Transport in Nanostructures and Mesoscopic Devices || IntroductionOuisse, Thierry · 2008