Investigations of SiC semiconductor nanoinclusions formed by sequential ion implantation and annealing in thermally oxidized Si
- 作者Dmitry Wainstein; Anatoly Kovalev; David Tetelbaum; Alexey Mikhaylov; Alexey Belov
- 卷第40卷
- 印刷ISSN0142-2421
- 电子ISSN1096-9918
- 文件大小221.45KB
- 发表时间2008
- DOI10.1002/sia.2734
- 页码571-574
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