ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor
- 作者S.J. Lim; Soonju Kwon; H. Kim
- 卷第516卷
- 期第7期
- 印刷ISSN0040-6090
- 文件大小529.51KB
- 发表时间2008
- DOI10.1016/j.tsf.2007.03.144
- 页码1523-1528
同作者推荐
Stability in a high humidity environment of TCO thin films deposited at low temperaturesTadatsugu Minami; Takeshi Kuboi; Toshihiro Miyata; Yuusuke Ohtani · 2008
Effect of thickness on the stability of transparent conducting impurity-doped ZnO thin films in a high humidity environmentTadatsugu Minami; Toshihiro Miyata; Yuusuke Ohtani; Takeshi Kuboi · 2007
Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combinationMinami, Tadatsugu; Ohtani, Yuusuke; Miyata, Toshihiro; Kuboi, Takeshi · Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films · 2007