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Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM Applications

Characteristics of n-Channel MOSFETs With Tailored Source/Drain Extension for Mask ROM and EEPROM Applications

Yuan-Feng Chen; Jeng Gong; Wei-Jen Tung; Shang-Wei Chou; Jeng, E.S.
  • 作者Yuan-Feng Chen; Jeng Gong; Wei-Jen Tung; Shang-Wei Chou; Jeng, E.S.
  • 卷第56卷
  • 期第9期
  • 印刷ISSN0018-9383
  • 电子ISSN1557-9646
  • 文件大小979.08KB
  • 发表时间2009
  • DOI10.1109/ted.2009.2026521
  • 页码2099-2106
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