Growth of InGaAs/GaNAs strain-compensated quantum dot superlattice on GaAs (3 1 1)B by molecular beam epitaxy

• 作者Ryuji Oshima; Yasushi Shoji; Ayami Takata; Yoshitaka Okada
• 卷第311卷
• 期第7期
• 印刷ISSN0022-0248
• 文件大小1135.02KB
• 发表时间2009
• DOI10.1016/j.jcrysgro.2008.10.108
• 页码1770-1773