![Influence of various NO annealing conditions on N-type and P-type 4H-SiC MOS capacitors]()
Influence of various NO annealing conditions on N-type and P-type 4H-SiC MOS capacitorsJia, Yifan; Lv, Hongliang; Tang, Xiaoyan; Han, Chao; Song, Qingwen; Zhang, Yimen; Zhang, Yuming; Dimitrijev, Sima; Han, Jisheng; Haasmann, Daniel · Journal of Materials Science: Materials in Electronics · 2019