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- 期刊名称Cold War History
- 作者Tobia, Simona
- 卷第11卷
- 期第1期
- 印刷ISSN1468-2745
- 文件大小168.92KB
- 发表时间2011-2
- DOI10.1080/14682745.2011.545596
- 页码27-47
[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - Commercial applications of GaAs ICs in JapanNoguchi, T. · 1990
[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - Compound semiconductor integrated circuits programmes in EuropeTurner, J.A. · 1990
[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New device technologies developed in the Japanese national project on super computer systemYanazawa, H. · 1990
[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - Stepper technology in 0.5 mu m GaAs monolithic microwave integrated circuits (MMIC) applicationsFink, S.L.; Chi, T.Y.; Wang, D.C. · 1990
[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - A low power 16 K GaAs HMESFET static RAM with built-in redundancyTsen, T.; Kwiat, J.; Walton, E.; Elliott, K.; Tiku, S.; Cappon, A. · 1990
[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - Millimeter wave monolithic IC's using direct ion implantation in to GaAs LEC substratesLau, C.L.; Feng, M.; Hwang, T.; Lepkowski, T.; Ito, C.; Dunn, V.; Hodges, N. · 1990
[IEEE 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - New Orleans, LA, USA (7-10 Oct. 1990)] 12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) - Use of two-dimensional process and device modeling to solve some real problems in GaAs MESFET design and analysisAnholt, R. · 1990
[IEEE GaAs IC Symposium. 25th Annual Technical Digest 2003 - San Diego, CA, USA (2003.11.9-2003.11.12)] 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003. - On the investigation of gate metal interdiffusion in GaAs HEMTsChou, Y.C.; Leung, D.; Lai, R.; Grundbacher, R.; Liu, P.H.; Biedenbender, M.; Kan, Q.; Eng, D.; Wojtowicz, M.; Oki, A. · 2003