Comprehensive numerical simulation of threshold-voltage transients in nitride memories
- 作者Aurelio Mauri; Salvatore M. Amoroso; Christian Monzio Compagnoni; Alessandro Maconi; Alessandro S. Spinelli
- 卷第56卷
- 期第1期
- 印刷ISSN0038-1101
- 文件大小715.58KB
- 发表时间2011
- DOI10.1016/j.sse.2010.11.004
- 页码23-30
同标题推荐
Study of potential high- <i>k</i> dielectric for UTB SOI MOSFETs using analytical modeling of the gate tunneling leakageDarbandy, Ghader; Lime, François; Cerdeira, Antonio; Estrada, Magali; Garduño, Ivan; Iñiguez, Benjamin · Semiconductor Science and Technology · 2011
[IEEE 2009 International Semiconductor Device Research Symposium (ISDRS 2009) - College Park, MD (2009.12.9-2009.12.11)] 2009 International Semiconductor Device Research Symposium - Analytical modeling of the gate tunneling leakage for the determination of adequate high-K dielectrics in 22 nm double-gate SOI MOSFETsDarbandy, G.; Ritzenthaler, R.; Lime, F.; Garduo, S.I.; Estrada, M.; Cerdeira, A.; Iiguez, B. · 2009