Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond Substrate
- 期刊名称Japanese Journal of Applied Physics
- 作者Hirama, Kazuyuki; Kasu, Makoto; Taniyasu, Yoshitaka
- 卷第51卷
- 期第1期
- 印刷ISSN0021-4922
- 电子ISSN1347-4065
- 文件大小996.79KB
- 发表时间2012-1-20
- DOI10.1143/jjap.51.01ag09
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