![AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHz]()
AlGaN–GaN HEMTs on Si With Power Density Performance of 1.9 W/mm at 10 GHzMinko, A.; Hoel, V.; Morvan, E.; Grimbert, B.; Soltani, A.; Delos, E.; Ducatteau, D.; Gaquiere, C.; Theron, D.; De Jaeger, J.C.; Lahreche, H.; Wedzikowski, L.; Langer, R.; Bove, P.; Bove, P. · IEEE Electron Device Letters · 2004