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Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetectorAsaf Albo; Dan Fekete; Gad Bahir · 2008
Photocurrent spectroscopy of intersubband transitions in GaInAsN/(Al)GaAs asymmetric quantum well infrared photodetectorsAlbo, Asaf; Fekete, Dan; Bahir, Gad · Journal of Applied Physics · 2012
The opportunity of using InGaAsN/AlGaAs quantum wells for extended short-wavelength infrared photodetectionAlbo, Asaf; Fekete, Dan; Bahir, Gad · Infrared Physics & Technology · 2018
Electronic bound states in the continuum above (Ga,In)(As,N)/(Al,Ga)As quantum wellsAlbo, Asaf; Fekete, Dan; Bahir, Gad · Physical Review B · 2012
Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInAsN/GaAs quantum wells by metal organic chemical vapor deposition for near infrared applicationsAlbo, Asaf; Cytermann, Catherine; Bahir, Gad; Fekete, Dan · Applied Physics Letters · 2010
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013