![[IEEE 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD) - Grenoble, France (2012.09.24-2012.09.26)] 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETs]()
[IEEE 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - formerly known as the Semiconductor Conference Dresden (SCD) - Grenoble, France (2012.09.24-2012.09.26)] 2012 International Semiconductor Conference Dresden-Grenoble (ISCDG) - Front-back gate coupling effect on 1/f noise in ultra-thin Si film FDSOI MOSFETsTheodorou, C. G.; Ioannidis, E. G.; Haendler, S.; Planes, N.; Arnaud, F.; Andrieu, F.; Poiroux, T.; Faynot, O.; Jomaah, J.; Dimitriadis, C. A.; Ghibaudo, G. · 2012