![Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbers]()
Effect of occupation of the excited states and phonon broadening on the determination of the hot carrier temperature from continuous wave photoluminescence in InGaAsP quantum well absorbersEsmaielpour, Hamidreza; Whiteside, Vincent R.; Hirst, Louise C.; Tischler, Joseph G.; Ellis, Chase T.; Lumb, Matthew P.; Forbes, David V.; Walters, Robert J.; Sellers, Ian R. · Progress in Photovoltaics: Research and Applications · 2017