![[IEEE 2017 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2017.2.5-2017.2.9)] 2017 IEEE International Solid-State Circuits Conference (ISSCC) - 25.2 A 10MHz 3-to-40V V<inf>IN</inf> tri-slope gate driving GaN DC-DC converter with 40.5dBµV spurious noise compression and 79.3% ringing suppression for automotive applications]()
[IEEE 2017 IEEE International Solid- State Circuits Conference - (ISSCC) - San Francisco, CA, USA (2017.2.5-2017.2.9)] 2017 IEEE International Solid-State Circuits Conference (ISSCC) - 25.2 A 10MHz 3-to-40V V<inf>IN</inf> tri-slope gate driving GaN DC-DC converter with 40.5dBµV spurious noise compression and 79.3% ringing suppression for automotive applicationsKe, Xugang; Sankman, Joseph; Chen, Yingping; He, Lenian; Ma, D. Brian · 2017