![[IEEE 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China (2018.5.16-2018.5.18)] 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Influence of Parasitic Capacitances on Transient Current Distribution of Paralleled SiC MOSFETs]()
[IEEE 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China (2018.5.16-2018.5.18)] 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Influence of Parasitic Capacitances on Transient Current Distribution of Paralleled SiC MOSFETsKe, Junji; Huang, Huazhen; Sun, Peng; Abuogo, James; Zhao, Zhibin; Cui, Xiang · 2018