![Electrical Bistabilities of Write-Once-Read-Many-Times Memory Devices Fabricated Utilizing Indium Tin Oxide Nanoparticles Embedded in a Poly 4-Vinyl Phenol Layer]()
Electrical Bistabilities of Write-Once-Read-Many-Times Memory Devices Fabricated Utilizing Indium Tin Oxide Nanoparticles Embedded in a Poly 4-Vinyl Phenol LayerXu, Jia; Zhang, Yong; Li, Xiaochan; Zhang, Tao; He, Miao; Qian, Weining; Li, Yun; Wen, Xiaoxia; Chen, Fangsheng; Ding, Lizhen; Wang, Bo · Nanoscience and Nanotechnology Letters · 2013