![[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile]()
[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profileKeith, S.; Jungemann, C.; Decker, S.; Neinhus, B.; Bartels, M.; Meinerzhagen, B. · 1999