Preparation of Uranium-233
- 期刊名称Journal of Nuclear Science and Technology
- 作者ISHIMORI, Tomitaro; UENO, Kaoru; KIMURA, Kan; HOSHI, Michio; SAEKI, Masakatsu; SAITO, Akira; ASANO, Masaharu; AKATSU, Johkun; LEUGGER, Bruno
- 卷第9卷
- 期第12期
- 印刷ISSN0022-3131
- 电子ISSN1881-1248
- 文件大小450.72KB
- 发表时间1972-12
- DOI10.1080/18811248.1972.9734931
- 页码716-720
Graphene Frequency MultipliersHan Wang, ; Nezich, D.; Jing Kong, ; Palacios, T. · IEEE Electron Device Letters · 2009
Impact ionization in GaAs MESFETsHui, K.; Hu, C.; George, P.; Ko, P.K. · IEEE Electron Device Letters · 1990
Stability Analysis in CNTFETsHaji-Nasiri, Saeed; Moravvej-Farshi, Mohammad Kazem · IEEE Electron Device Letters · 2013
A Memristor Device ModelYakopcic, Chris; Taha, Tarek M.; Subramanyam, Guru; Pino, Robinson E.; Rogers, Stanley · IEEE Electron Device Letters · 2011
Junctionless Tunnel Field Effect TransistorGhosh, Bahniman; Akram, Mohammad Waseem · IEEE Electron Device Letters · 2013
Strained SOI FINFET SRAM DesignKerber, Pranita; Kanj, Rouwaida; Joshi, Rajiv V. · IEEE Electron Device Letters · 2013
Electromigration characteristics of copper interconnectsTao, J.; Cheung, N.W.; Hu, C. · IEEE Electron Device Letters · 1993
MOSFET drain breakdown voltageWu-Shiung Feng, ; Chan, T.Y.; Chenming Hu · IEEE Electron Device Letters · 1986