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Calculation of charge-handling capacity in twin-layer peristaltic charge-coupled devicesLin, W.N.; Chan, Y.T. · 1979
Lateral p-n-p-n deviceJ.S.T. Huang · 1968
Switching properties of m.n.o.s. memory transistorsHuang, J.S.T. · Electronics Letters · 1972
Characteristics of a depletion-type IGFETHuang, J.S.T. · 1973
Characteristics of bilateral MOS-controlled thyristors (BMCT)Huang, J.S.T. · 1993
An analytical model for LDD drain structuresHuang, J.S.T. · IEEE Transactions on Electron Devices · 1988
Bulk lifetime determination using an MOS capacitorHuang, J.S.T. · Proceedings of the IEEE · 1970
Characterization of boron diffusion from doped oxide sourceJ.S.T. Huang · 1973