Monte Carlo simulations of low-field hole transport in strained InGaAs quantum wells
- 期刊名称Semiconductor Science and Technology
- 作者Crow, G C; Kelsall, R W; Abram, R A
- 卷第8卷
- 期第2期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小371.03KB
- 发表时间1993-02-01
- DOI10.1088/0268-1242/8/2/012
- 页码219-223
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