Reduced pressure chemical vapor deposition of Si[sub 1−x−y]Ge[sub x]C[sub y]/Si and Si[sub 1−y]C[sub y]/Si heterostructuresV. Loup; J. M. Hartmann; G. Rolland; P. Holliger; F. Laugier; C. Vannuffel; M. N. Séméria · 2002

Admittance spectroscopy analysis of the conduction band offsets in Si/Si[sub 1−x−y]Ge[sub x]C[sub y] and Si/Si[sub 1−y]C[sub y] heterostructuresSingh, D. V.; Rim, K.; Mitchell, T. O.; Hoyt, J. L.; Gibbons, J. F. · Journal of Applied Physics · 1999

Thermodynamic assessment of the Ce–Si, Y–Si, Mg–Ce–Si and Mg–Y–Si systemsShukla, Adarsh; Kang, Youn-Bae; Pelton, Arthur D. · International Journal of Materials Research · 2009

Critical points of Si[sub 1−y]C[sub y] and Si[sub 1−x−y]Ge[sub x]C[sub y] layers strained pseudomorphically on Si(001)Kissinger, W.; Osten, H. J.; Weidner, M.; Eichler, M. · Journal of Applied Physics · 1996

Measurement of the conduction band offsets in Si/Si[sub 1−x−y]Ge[sub x]C[sub y] and Si/Si[sub 1−y]C[sub y] heterostructures using metal-oxide-semiconductor capacitorsSingh, D. V.; Rim, K.; Mitchell, T. O.; Hoyt, J. L.; Gibbons, J. F. · Journal of Applied Physics · 1999

Growth dynamics of Si[sub 1−y]C[sub y] and Si[sub 1−x−y]Ge[sub x]C[sub y] on Si(001) surface from disilane, germane, and methylsilaneR. W. Price; E. S. Tok; N. J. Woods; J. Zhang · 2002

Oxidation of Si[sub 1−y]C[sub y] (0≤y≤0.02) strained layers grown on Si(001)K. Pressel · 1998

Optoelectronic properties of high-Si-content-Ge <sub/> 1 <i>−x</i> – <i>y</i> </sub> Si <sub/><i>x</i> </sub> Sn <i> <sub/>y</sub></i> /Ge <sub/> 1− <i>x</i> </sub> Sn <sub/><i>x</i> </sub> /Ge <sub/> 1− <i>x–y</i> </sub> Si <sub/><i>x</i> </sub> Sn <sub/><i>y</i> </sub> double heterostructureFukuda, Masahiro; Rainko, Denis; Sakashita, Mitsuo; Kurosawa, Masashi; Buca, Dan; Nakatsuka, Osamu; Zaima, Shigeaki · Semiconductor Science and Technology · 2018