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Double tunnel junctions for magnetic random access memory devicesInomata, K.; Saito, Y.; Nakajima, K.; Sagoi, M. · Journal of Applied Physics · 2000
Diode-Free Architecture Promises Dramatic Increase in Memory Density in Magnetic Random Access Memory DevicesPalucka, Tim · MRS Bulletin · 2000
Finite temperature simulation studies of spin–flop magnetic random access memory devicesS.T. Chui; Ching-Ray Chang · 2006
First principles modeling of magnetic random access memory devices (invited)W. H. Butler; X. Zhang; T. C. Schulthess; D. M. C. Nicholson; A. B. Oparin; J. M. Maclaren · 1999
Development and process control of magnetic tunnel junctions for magnetic random access memory devicesKula, Witold; Wolfman, Jerome; Ounadjela, Kamel; Chen, Eugene; Koutny, William · Journal of Applied Physics · 2003
Precessional reversal in orthogonal spin transfer magnetic random access memory devicesLiu, H.; Bedau, D.; Backes, D.; Katine, J. A.; Kent, A. D. · Applied Physics Letters · 2012
Spin-transfer magnetic random access memory devices with an orthogonal polarizing layerLiu, Huanlong · Modern Physics Letters B · 2014