Mechanism of impact ionization enhancement in GaAs p-i-n diodes under high illumination conditions
- 期刊名称Semiconductor Science and Technology
- 作者Wilson, S P; Walker, A B
- 卷第13卷
- 期第2期
- 印刷ISSN0268-1242
- 电子ISSN1361-6641
- 文件大小124.25KB
- 发表时间1998-02-01
- DOI10.1088/0268-1242/13/2/006
- 页码190-193
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