发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

GaN-based high electron-mobility transistors for microwave and RF control applications

GaN-based high electron-mobility transistors for microwave and RF control applications

Drozdovski, N.V.; Caverly, R.H.

期刊名称IEEE Transactions on Microwave Theory and Techniques
作者Drozdovski, N.V.; Caverly, R.H.
卷第50卷
期第1期
印刷ISSN0018-9480
文件大小92.50KB
发表时间2002
DOI10.1109/22.981235
页码4-8

← 返回【学霸图书馆】主页