The Knesset
- 期刊名称Israel Affairs
- 作者Chazan, Naomi
- 卷第11卷
- 期第2期
- 印刷ISSN1353-7121
- 电子ISSN1743-9086
- 文件大小170.43KB
- 发表时间2005-04
- DOI10.1080/1353712042000326524
- 页码392-416
Graphene Frequency MultipliersHan Wang, ; Nezich, D.; Jing Kong, ; Palacios, T. · IEEE Electron Device Letters · 2009
Impact ionization in GaAs MESFETsHui, K.; Hu, C.; George, P.; Ko, P.K. · IEEE Electron Device Letters · 1990
Stability Analysis in CNTFETsHaji-Nasiri, Saeed; Moravvej-Farshi, Mohammad Kazem · IEEE Electron Device Letters · 2013
A Memristor Device ModelYakopcic, Chris; Taha, Tarek M.; Subramanyam, Guru; Pino, Robinson E.; Rogers, Stanley · IEEE Electron Device Letters · 2011
Junctionless Tunnel Field Effect TransistorGhosh, Bahniman; Akram, Mohammad Waseem · IEEE Electron Device Letters · 2013
Strained SOI FINFET SRAM DesignKerber, Pranita; Kanj, Rouwaida; Joshi, Rajiv V. · IEEE Electron Device Letters · 2013
Electromigration characteristics of copper interconnectsTao, J.; Cheung, N.W.; Hu, C. · IEEE Electron Device Letters · 1993
MOSFET drain breakdown voltageWu-Shiung Feng, ; Chan, T.Y.; Chenming Hu · IEEE Electron Device Letters · 1986