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Hexagonal AlN(0001) Heteroepitaxial Growth on Cubic Diamond (001)Hirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto · Japanese Journal of Applied Physics · 2010
Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) SurfaceHirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto · Japanese Journal of Applied Physics · 2012
Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surfaceHirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto · Journal of Applied Physics · 2010
Growth and Device Properties of AlGaN/GaN High-Electron Mobility Transistors on a Diamond SubstrateHirama, Kazuyuki; Kasu, Makoto; Taniyasu, Yoshitaka · Japanese Journal of Applied Physics · 2012
AlGaN/GaN high-electron mobility transistors with low thermal resistance grown on single-crystal diamond (111) substrates by metalorganic vapor-phase epitaxyHirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto · Applied Physics Letters · 2011