Editorial
- 作者Claes G. Granqvist; M. Sedlaříková; J. Vondrák
- 卷第90卷
- 期第4期
- 印刷ISSN0927-0248
- 文件大小95.93KB
- 发表时间2006
- DOI10.1016/j.solmat.2005.05.003
- 页码383-384
Semiconductor–metal phase transition of iron disilicide by laser annealing and its application to form device electrodesNaotaka Otogawa; Shinan Wang; Shusaku Kihara; Zhengxin Liu; Yasuhiro Fukuzawa; Yasuhito Suzuki; Masato Osamura; Teruhisa Ootsuka; Takahiro Mise; Kiyoshi Miyake; Yasuhiko Nakayama; Hisao Tanoue; Yunosuke Makita · 2004
Doping of β-FeSi2 films with boron and arsenic by sputtering and its application for optoelectronic devicesZhengxin Liu; Masato Osamura; Teruhisa Ootsuka; Shinan Wang; Yasuhiro Fukuzawa; Yasuhito Suzuki; Ryo Kuroda; Takahiro Mise; Naotaka Otogawa; Yasuhiko Nakayama; Hisao Tanoue; Yunosuke Makita · 2005
Formation of thin β-FeSi2 template layer for the epitaxial growth of thick film on Si (111) substrateRyo Kuroda; Zhengxin Liu; Yasuhiro Fukuzawa; Yasuhito Suzuki; Masato Osamura; Shinan Wang; Naotaka Otogawa; Teruhisa Ootsuka; Takahiro Mise; Yasushi Hoshino; Yasuhiko Nakayama; Hisao Tanoue; Yunosuke Makita · 2004
Studies on aluminum-doped ZnO films for transparent electrode and antireflection coating of β-FeSi2 optoelectronic devicesTeruhisa Ootsuka; Zhengxin Liu; Masato Osamura; Yasuhiro Fukuzawa; Ryo Kuroda; Yasuhito Suzuki; Naotaka Otogawa; Takahiro Mise; Shinan Wang; Yasushi Hoshino; Yasuhiko Nakayama; Hisao Tanoue; Yunosuke Makita · 2005
Studies of Ga diffusion and the elimination of pinholes in Ga-doped β-FeSi2 films prepared by MBERyo Kuroda; Zhengxin Liu; Yasuhiro Fukuzawa; Yasuhito Suzuki; Teruhisa Ootsuka; Shinan Wang; Masato Osamura; Naotaka Otogawa; Yasusi Hoshino; Yasuhiko Nakayama; Hisao Tanoue; Yunosuke Makita · 2005