海量图书期刊资源,随时随地畅享阅读乐趣
Dielectric Engineered Tunnel Field-Effect TransistorIlatikhameneh, Hesameddin; Ameen, Tarek; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib · IEEE Electron Device Letters · 2015
Complementary Black Phosphorus Tunneling Field-Effect TransistorsWu, Peng; Ameen, Tarek; Zhang, Huairuo; Bendersky, Leonid A.; Ilatikhameneh, Hesameddin; Klimeck, Gerhard; Rahman, Rajib; Davydov, Albert V.; Appenzeller, Joerg · ACS Nano · 2018
Design Rules for High Performance Tunnel Transistors from 2D MaterialsIlatikhameneh, Hesameddin; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib · IEEE Journal of the Electron Devices Society · 2016
Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETsChen, Chin-Yi; Ameen, Tarek A.; Ilatikhameneh, Hesameddin; Rahman, Rajib; Klimeck, Gerhard; Appenzeller, Joerg · IEEE Transactions on Electron Devices · 2018
From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of TunnelingIlatikhameneh, Hesameddin; Salazar, Ramon B.; Klimeck, Gerhard; Rahman, Rajib; Appenzeller, Joerg · IEEE Transactions on Electron Devices · 2016
Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide MaterialsIlatikhameneh, Hesameddin; Tan, Yaohua; Novakovic, Bozidar; Klimeck, Gerhard; Rahman, Rajib; Appenzeller, Joerg · IEEE Journal on Exploratory Solid-State Computational Devices and Circuits · 2015
A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulationsSalazar, Ramon B.; Ilatikhameneh, Hesameddin; Rahman, Rajib; Klimeck, Gerhard; Appenzeller, Joerg · Journal of Applied Physics · 2015
Graphene Frequency MultipliersHan Wang, ; Nezich, D.; Jing Kong, ; Palacios, T. · IEEE Electron Device Letters · 2009
Impact ionization in GaAs MESFETsHui, K.; Hu, C.; George, P.; Ko, P.K. · IEEE Electron Device Letters · 1990
Stability Analysis in CNTFETsHaji-Nasiri, Saeed; Moravvej-Farshi, Mohammad Kazem · IEEE Electron Device Letters · 2013
A Memristor Device ModelYakopcic, Chris; Taha, Tarek M.; Subramanyam, Guru; Pino, Robinson E.; Rogers, Stanley · IEEE Electron Device Letters · 2011
Junctionless Tunnel Field Effect TransistorGhosh, Bahniman; Akram, Mohammad Waseem · IEEE Electron Device Letters · 2013
Strained SOI FINFET SRAM DesignKerber, Pranita; Kanj, Rouwaida; Joshi, Rajiv V. · IEEE Electron Device Letters · 2013
Electromigration characteristics of copper interconnectsTao, J.; Cheung, N.W.; Hu, C. · IEEE Electron Device Letters · 1993
MOSFET drain breakdown voltageWu-Shiung Feng, ; Chan, T.Y.; Chenming Hu · IEEE Electron Device Letters · 1986