Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure
- 作者Nanen, Y.; Yoshioka, H.; Noborio, M.; Suda, J.; Kimoto, T.
- 卷第56卷
- 期第11期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小623.99KB
- 发表时间2009
- DOI10.1109/ted.2009.2030437
- 页码2632-2637
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