![Effect of Etching Time to Tune Magnetoresistance Between Positive and Negative Values in p-Type Silicon Nanowires]()
Effect of Etching Time to Tune Magnetoresistance Between Positive and Negative Values in p-Type Silicon NanowiresBen Abdelaziz, B.; Radaoui, M.; Ben Fredj, A.; Romdhane, S.; Ben Alaya, C.; Bouaïcha, M.; Bouchriha, H. · Journal of Electronic Materials · 2019