Planung der Behandlung
- 期刊名称Der Freie Zahnarzt
- 作者Esser, Peter H. G.
- 卷第61卷
- 期第10期
- 印刷ISSN0340-1766
- 电子ISSN2190-3824
- 文件大小76.83KB
- 发表时间2017-10
- DOI10.1007/s12614-017-7003-1
- 页码54-54
A Tunable High-Power V-Band Gunn OscillatorSun, C.; Benko, E.; Tully, J.W. · 1979
Monte Carlo simulation of a millimeter-wave Gunn-effect relaxation oscillatorTully, J.W. · 1983
Organometallic conformational equilibria : XIV. steric factors in 1,2-disubstituted-π-allylpalladium chloride complexesJ.W. Faller; M.T. Tully; K.J. Laffey · 1972
[IEEE CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics - Baltimore, MD (May 18-23, 1997)] CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics - Quasi-phase-matched Harmonic Generation In Gallium Arsenide And Zinc Selenide Single-crystal PlatesKomine, H.; Long, W.H.; Tully, J.W. · 1997
Graphene Frequency MultipliersHan Wang, ; Nezich, D.; Jing Kong, ; Palacios, T. · IEEE Electron Device Letters · 2009
Impact ionization in GaAs MESFETsHui, K.; Hu, C.; George, P.; Ko, P.K. · IEEE Electron Device Letters · 1990
Stability Analysis in CNTFETsHaji-Nasiri, Saeed; Moravvej-Farshi, Mohammad Kazem · IEEE Electron Device Letters · 2013
A Memristor Device ModelYakopcic, Chris; Taha, Tarek M.; Subramanyam, Guru; Pino, Robinson E.; Rogers, Stanley · IEEE Electron Device Letters · 2011
Junctionless Tunnel Field Effect TransistorGhosh, Bahniman; Akram, Mohammad Waseem · IEEE Electron Device Letters · 2013
Strained SOI FINFET SRAM DesignKerber, Pranita; Kanj, Rouwaida; Joshi, Rajiv V. · IEEE Electron Device Letters · 2013
Electromigration characteristics of copper interconnectsTao, J.; Cheung, N.W.; Hu, C. · IEEE Electron Device Letters · 1993
MOSFET drain breakdown voltageWu-Shiung Feng, ; Chan, T.Y.; Chenming Hu · IEEE Electron Device Letters · 1986